Performance Analysis of Spin Transfer Torque Random Access Memory with cross shaped free layer using Heusler Alloys by using micromagnetic studies

Bias-Field-Free Spin-Torque Oscillator Based on Two MgO-MTJs with a Shared Free Layer: Micromagnetic Modeling

New types of spintronics devices utilizing all-electrical magnetization manipulation by current, such as spin-torque transfer RAM and spin-torque oscillators, have been developed based on MgO magnetic tunnel junctions (MTJs) [1]. Spin-torque oscillators based on MTJs with in-plane magnetization [2] show high frequency capabilities, but still need an external magnetic field and are characterized...

A Novel Method of SOT-MRAM Switching

Three-terminal memory cell structures based on a magnetic tunnel junction (MTJ) are promising candidates for future generations of magnetic memory [1]. In particular, three-terminal devices with spin-orbit torque (SOT) switching have already been proposed [2]. Typically, a SOT memory cell is an MTJ fabricated on a heavy metal channel with large spin-orbit interaction, wherein the free layer is ...

Geometry Optimization of Spin-Torque Oscillators Composed of Two MgO-MTJs with a Shared Free Layer

New types of spintronics devices utilizing all-electrical magnetization manipulation by current, such as spin-torque transfer RAM and spin-torque oscillators, have been developed based on MgO magnetic tunnel junctions (MTJs) with a large magneto-resistance ratio [1]. Spin-torque oscillators based on a single MTJ with in-plane magnetization [2] show high frequency capabilities, but still need an...

Micromagnetic simulation of high-power spin-torque oscillator in half- metallic Heusler alloy spin valve nanopillar

Artificially engineered Heusler ferrimagnetic superlattice exhibiting perpendicular magnetic anisotropy

To extend density limits in magnetic recording industry, two separate strategies were developed to build the storage bit in last decade, introduction of perpendicular magnetic anisotropy (PMA) and adoption of ferrimagnetism/antiferromagnetism. Meanwhile, these properties significantly improve device performance, such as reducing spin-transfer torque energy consumption and decreasing signal-ampl...